​​​​​​​[1]. Gharekhanlou, B., S. B. Tousaki, and S. Khorasani. ”Bipolar transistor based on graphane.” In Journal of Physics: Conference Series, vol. 248, no. 1, p. 012061. IOP Publishing, 2010. [2]. Touski, Shoeib Babaee, and Mahdi Pourfath. ”Substrate surface corrugation effects on the electronic transport in graphene nanoribbons.” Applied Physics Letters 103.14 (2013): 143506. [3]. Kahnoj, Sina Soleimani, Shoeib Babaee Touski, and Mahdi Pourfath. ”The effect of electronelectron interaction induced dephasing on electronic transport in graphene nanoribbons.” Applied Physics Letters 105, no. 10 (2014): 103502. [4]. Chaghazardi, Zahra, Shoeib Babaee Touski, Mahdi Pourfath, and Rahim Faez. ”Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness.” Journal of Applied Physics 120, no. 5 (2016): 053904. [5]. Touski, Shoeib Babaee, Rafael Rold´an, Mahdi Pourfath, and M. Pilar L´opez-Sancho. ”Enhanced spin-flip scattering by surface roughness in WS 2 and MoS 2 armchair nanoribbons.” Physical Review B 95, no. 16 (2017): 165301. [6]. Chaghazardi, Zahra, Rahim Faez, Shoeib Babaee Touski, and Mahdi Pourfath. ”Spin FET Based on Graphene Nanoribbon in the Presence of Surface Roughness.” IEEE Transactions on Electron Devices 64, no. 8 (2017): 3437-3442. [7]. Ariapour, Mohammad, and Shoeib Babaee Touski. ”Spin splitting and rashba effect at mono-layer gate in the presence of strain.” Materials Research Express 6, no. 7 (2019): 076402. [8]. Babaee Touski, Shoeib. ”Spin transport in armchair silicene nanoribbon on the substrate: The role of charged impurity.” physica status solidi (b) 256, no. 11 (2019): 1900082. [9]. Touski, Shoeib Babaee, and Manouchehr Hosseini. ”A comparative study of substrates disorder on mobility in the Graphene nanoribbon: Charged impurity, surface optical phonon, surface roughness.” Physica E: Low-dimensional Systems and Nanostructures 116 (2020): 113763. [10]. Touski, Shoeib Babaee, Mohammad Ariapour, and Manouchehr Hosseini. ”Electrical and electronic properties of strained mono-layer InTe.” Physica E: Low-dimensional Systems and Nanostructures 118 (2020): 113875. [11]. Hosseini, Manouchehr, and Shoeib Babaee Touski. ”Investigation of double-gate ferroelectric FET based on single-layer MoS2 with consideration of contact resistance.” Journal of Electronic Materials 49, no. 7 (2020): 4085-4090. [12]. Ariapour, Mohammad, and Shoeib Babaee Touski. ”Strain engineering of spin and Rashba splitting in Group-III monochalcogenide MX (M= Ga, In and X= S, Se, Te) monolayer.” Journal of Magnetism and Magnetic Materials 510 (2020): 166922. [13]. Kokabi, Alireza, and Shoeib Babaee Touski. ”Electronic and photocatalytic properties of Antimonene nanosheets.” Physica E: Low-dimensional Systems and Nanostructures 124 (2020): 114336. [14]. Ghobadi, Nayereh, and Shoeib Babaee Touski. ”The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field.” Journal of Physics: Condensed Matter 33, no. 8 (2020): 085502. [15]. Touski, Shoeib Babaee, and Nayereh Ghobadi. ”Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene.” Physica E: Low-dimensional Systems and Nanostructures 126 (2021): 114407. [16]. Touski, Shoeib Babaee, and M. Pilar L´opez-Sancho. ”Effects of vertical electric field and charged impurities on the spin-polarized transport of β-antimonene armchair nanoribbons.” Physical Review B 103, no. 11 (2021): 115433. [17]. Touski, Shoeib Babaee, and Nayereh Ghobadi. ”Structural, electrical, and Rashba properties of monolayer Janus Si 2 X Y (X, Y= P, As, Sb, and Bi).” Physical Review B 103, no. 16 (2021): 165404. [18]. Ghobadi, Nayereh, and Shoeib Babaee Touski. ”Structural, electrical and optical properties of bilayer SiX (X= N, P, As and Sb).” Journal of Physics: Condensed Matter 33, no. 28 (2021): 285502. [19]. Touski, Shoeib Babaee. ”Strain induced modification in electronic properties of monolayer InSb.” Superlattices and Microstructures 156 (2021): 106979. [20]. Touski, Shoeib Babaee, and Nayereh Ghobadi. ”Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2 X 4 (X= N, P, As and Sb).” Journal of Physics D: Applied Physics 54, no. 48 (2021): 485302. [21]. Kokabi, Alireza, and Shoeib Babaee Touski. ”Structural and electronic properties of semi-buckled phase of III4–V4 monolayers.” Physica E: Low-dimensional Systems and Nanostructures 134 (2021): 114922. [22]. Kokabi, Alireza, Shoeib Babaee Touski, and Amir Mamdouh. ”Negative differential resistance, rectification, tunable peak-current position and switching effects in an alanine-based molecular device.” Journal of medical engineering & technology 45, no. 7 (2021): 505-510. [23]. Ghobadi, Nayereh, Manouchehr Hosseini, and Shoeib Babaee Touski. ”Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties.” IEEE Transactions on Electron Devices (2022). [24]. Hasani, Nona, Ashkan Rajabi-Maram, and Shoeib Babaee Touski. ”Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers.” Journal of Magnetism and Magnetic Materials 543 (2022): 168638. [25]. Rajabi-Maram, Ashkan, Nona Hasani, and Shoeib Babaee Touski. ”Tuning electronic properties of MSb (M= C, Si, Ge and Sn) monolayers by strain engineering.” Physica E: Low-dimensional Systems and Nanostructures 138 (2022): 115065. [26]. Kokabi, Alireza, and Shoeib Babaee Touski. ”Hydrogen storage performance enhancement and bandgap opening of M-Decorated (M= Li, Na and K) III4–V4 monolayer by fluorine functionalization.” International Journal of Hydrogen Energy 47, no. 38 (2022): 16978-16984. [27]. Kokabi, Alireza, Mohammadreza Bahramy, and Shoeib Babaee Touski. ”Deep transfer learning correlation study of electronic and spin properties in buckled III–V monolayers.” Physica E: Lowdimensional Systems and Nanostructures 140 (2022): 115130. [28]. Niknezhad, H.N. and Touski, S.B., 2022. Tunneling fet based on monolayer antimonene: The role of vacancy. IEEE Transactions on Electron Devices, 69(10), pp.5934-5939. [29]. Hosseini, M., Akbarikho, A. and Touski, S.B., 2022. Effects of S-vacancy on electrical performance of monolayer TMD nanoribbons field-effect transistor. Materials Science in Semiconductor Processing, 152, p.107080. [30]. Kokabi, A., Bahramy, M. and Touski, S.B., 2023. Transfer learning prediction of spin–orbit correction from bond polarizability for electronic properties of group-III monochalcogenides monolayers. Physica E: Low-dimensional Systems and Nanostructures, 146, p.115449. [31]. Hasani, N., Rajabi-Maram, A. and Touski, S.B., 2023. Strain engineering of electronic and spin properties in SnX (X= P, As, Sb, Bi) monolayers. Journal of Physics and Chemistry of Solids, 174, p.111131. [32]. Rajabi-Maram, A., Hasani, N. and Touski, S.B., 2023. Structural and electronic properties of hexagonal MXH (M= C, Si, Ge and Sn; X= N, P, As and Sb) monolayers: A first-principles prediction. Physica E: Low-dimensional Systems and Nanostructures, 151, p.115710. [33]. Hasani, N., Shalchian, M., Rajabi-Maram, A. and Touski, S.B., 2023. Electrical Properties of Double-Gate Field-Effect Transistor Based on MA 2 N 4(M = Ti, Zr, and Hf; A = Si, Ge, and Sn) Monolayers. IEEE Transactions on Electron Devices. [34]. Adib, H., Mazaherifar, M., Touski, S.B. and Mohajerzadeh, S., 2023. Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers. IEEE Transactions on Electron Devices, 70(11), pp.6042-6048. [35]. Touski, S.B., Hosseini, M. and Kokabi, A., 2023. Anti-reflective MX (M= Sc and Y; X= N, P, As, Sb and Bi) monolayers: structural, electronic and optical study. Semiconductor Science and Technology, 39(1), p.015002. [36]. Kokabi, A., Bahramy, M. and Touski, S.B., 2024. Spin and electronic property prediction of IV–V binary monolayers using deep knowledge transfer method. Journal of Magnetism and Magnetic Materials, 590, p.171602. [37]. Kokabi, Alireza, Shoeib Babaee Touski, and Rasul Mardanian. ”Electronic and NLO Investigation of Bismuthene Nanosheet as a Promising Photocatalyst.” (2024). [38]. Alavi-Rad, H. and Touski, S.B., 2024. Electronic and optical properties of alkaline earth halides MX2 (M= group-II; X= group-VII) from monolayers to bulk: Anti-reflecting applications. Physica B: Condensed Matter, 676, p.415650